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po wer ma nage m ent & m ulti m ark et sic silicon carbide diode final da ta s heet rev. 2 . 0 , <201 2 - 0 3 - 2 3 > thin q! tm s ic sc ho ttk y dio de 1200v sic schottky diode IDW20S120
1) j - std20 and jesd22 final data sheet 2 rev. 2 . 0 , 201 2 - 0 3 - 2 3 1 description features ? revolutionary semiconductor material - silicon carbide ? b enchmark s witching behavior ? no reverse recovery/ no forward recovery ? temperature independent switching behavior ? high surge current capability ? pb - free le ad plating; rohs compliant ? qualified according to jedec 1) for target applications ? optimized for high temperature operation benefits ? system efficiency improvement over si diodes ? system cost / size savings due to reduced cooling requirements ? enabling higher frequency / increased power density solutions ? higher system reliability due to lower operating temperatures ? reduced emi applications ? smps; ccm pfc ? solar applications; ups; motor drives table 1 key performance parameters parame ter value (leg/device) unit v dc 1200 v q c @ v r = 400v 36/72 nc i f @ t c < 1 4 0 c 10/20 a table 2 pin definition pin 1 pin 2 pin 3 a c a type / ordering code package marking rel a ted links idw 20 s120 pg - to247 - 3 d 20 s120 www.infineon.com/sic idw 20 s120 thinq!? sic schottky diode 1 2 3 the 1200v family of infineon sic schottky diodes has emerged over the years as the industry standard and is now being extended with the idwxxs120 product family in the to247 package. the very good thermal characteristics of the to247 in combination with the low v f of the 1200v diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. with the introduction o f this package, infineon now offers a current capability of up to 30a in the 1200v range. 1 2 3 case
thinq! tm sic schottky diode idw 20 s120 table of contents final data sheet 3 rev. 2 . 0 , 201 2 - 0 3 - 2 3 table of contents 1 description ................................ ................................ ................................ ................................ .......... 2 2 maximum ratings ................................ ................................ ................................ ................................ 4 3 thermal characteristics ................................ ................................ ................................ ..................... 4 4 electrical characteristics ................................ ................................ ................................ ................... 5 5 elec trical characteristics diagrams ................................ ................................ ................................ .. 6 6 package outlines ................................ ................................ ................................ ................................ 9 7 revision history ................................ ................................ ................................ ............................... 10
thinq! tm s ic schottky diode idw 20 s120 maximum ratings final data sheet 4 rev. 2 . 0 , 201 2 - 0 3 - 2 3 2 maximum ratings t able 3 maximum ratings parameter symbol values (leg/device) unit note/test condition min. typ. max. continuous forward current i f C C 10/20 a t c < 1 4 0 c, d=1 surge non - repetitive forward current, sine halfwave i f ,sm C C 53/ 106 t c = 25c, t p =10 ms C C 44/88 t c = 150c, t p =10 ms non - repetitive peak forward current i f ,max C C 266/532 t c = 2 5 c, t p =10 s i2t value i2dt C C 14/5 5 a2s t c = 25c, t p =10 ms C C 10/39 t c = 150c, t p =10 ms repetitive peak reverse voltage v rrm C C 1200 v diode dv/dt ruggedness dv/dt C C 50 v/ns v r =0..480 v power dissipation p tot C C 1 1 5 /2 3 0 w t c = 25c operating and storage temperature t j ;t stg - 55 C 175 c mounting torque C C 60 ncm m 3 and m3 .5 screws 3 thermal characteristics table 4 thermal characteristics to - 2 47 - 3 parameter symbol values (leg/device) unit note/test condition min. typ. max. thermal resistance, junction - case r thjc C C 1. 3 /0.6 5 k/w thermal resistance, junction - ambient r thja C C 62 l eaded soldering temperature, wavesoldering only allowed at leads t sold C C 260 c 1.6mm (0.063 in.) from case for 10 s
thinq! tm sic schottky diode idw 20 s120 electrical characteristics final data sheet 5 rev. 2 . 0 , 201 2 - 0 3 - 2 3 4 electrical characteristics table 5 static characteristics parameter symbol values (leg/device) unit note/te st condition min. typ. max. dc blocking voltage v dc 120 0 C C v i r = 0. 4 8 ma, t j = 25c diode forward voltage v f C 1.5 1.8 i f = 20 a, t j =25c C 2.4 C i f = 20 a, t j =150c reverse current i r C 5/10 240/480 a v r =1200 v, t j =25c C 20/40 500/1000 v r =1200 v, t j =150c table 6 ac characteristics parameter symbol values (leg/device) unit note/test condition min. typ. max. total capacitive charge q c C 36/72 C nc v r =400 v, di/dt =200a/ s, i f i f,max , t j =150c. C 55/110 C v r =1000 v, di/dt =200a/ s, i f i f,max , t j =150c. total capacitance c C 58 0/1 160 C pf v r =1 v, f =1 mhz C 5 0/1 0 0 C v r =300 v, f =1 mhz C 4 0 / 8 0 C v r =600 v, f =1 mhz
thinq! tm sic schottky diode idw 20 s120 electrical characteristics diagrams final data sheet 6 rev. 2 . 0 , 201 2 - 0 3 - 2 3 5 electrical characteristics diagrams table 7 p ower dissipati on typical forward characteristic s (per device) p tot =f( t c ) ; r thjc,max i f =f( v f ) ; t p =200 s; parameter: t j table 8 d iode forward current (per leg) diode forward current (per device) i f =f( t c ) ; t j 175c; r thjc,max ; parameter d =duty cycle i f =f( t c ) ; t j 175c; r thjc,max ; parameter d =duty cycle - 55 c 25c 100c 150c 175c 0 50 100 150 200 250 25 50 75 100 125 150 175 p tot [w] t c [ c] per device per leg 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i f [ a] v f [v] 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175 i f [a] t c [ c] 0.1 0.3 0.5 0.7 1 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 175 i f [a] t c [ c] 0.1 0.3 0.5 0.7 1
thinq! tm sic schottky diode idw 20 s120 electrical characteristics diagrams final data sheet 7 rev. 2 . 0 , 201 2 - 0 3 - 2 3 table 9 typ. capacitance charge vs. current slope 1) (per leg) typ . reverse current vs. reverse voltage (per leg) q c =f( di f /dt); v r = 400v; t j = 150c; i f i f,max ; per device the values double i r =f( v r ); parameter: t j ; per device the values double 1) only capacitive charge, guaranteed by design. table 10 max . transient thermal impedance (per leg) max . transient thermal impeda nce (per device) z th,jc =f( t p ) ; parameter: d= t p / t z th,jc =f( t p ) ; parameter: d= t p / t - 55 c 175c 150c 25c 1 00c 0 5 10 15 20 25 30 35 40 100 300 500 700 900 q c [nc] d i f /dt [a/s] 1.e - 9 1.e - 8 1.e - 7 1.e - 6 1.e - 5 1.e - 4 200 400 600 800 1000 1200 i r [a] v r [v] 0.01 0.1 1 1.e - 06 1.e - 03 1.e+00 z th,jc [k/w] t p [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.1 1 1.e - 06 1.e - 03 1.e+00 z th,jc [k/w] t p [s] 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
thinq! tm sic schottky diode idw 20 s120 electrical characteristics diagrams final data sheet 8 rev. 2 . 0 , 201 2 - 0 3 - 2 3 table 11 typ. capacitance stored energy (per leg) typ. capacitance vs. reverse voltage (per leg) e c =f( v r ); per device the values double c =f( v r ); t j =25c; f =1 mhz, per device the values double 0 5 10 15 20 25 30 0 200 400 600 800 1000 1200 e c [j] v r [v] 0 100 200 300 400 500 600 700 800 0.1 1 10 100 1000 c [pf] v r [v]
thinq! tm sic schottky diode idw 20 s120 package outlines final data sheet 9 rev. 2 . 0 , 201 2 - 0 3 - 2 3 6 package outlines figure 1 outlines to - 2 4 7 , dimensions in mm/inches
thinq! tm sic schottky diode idw 20 s120 revision history we listen to your comments any inf ormation within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com e dition 201 2 - 0 3 - 2 3 published by infineon technologies ag 81726 munich, germany ? 201 2 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or charac teristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, inclu ding without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon tec hnologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technolog ies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or system s are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. final data sheet 10 r ev. 2 . 0 , 201 2 - 0 3 - 2 3 7 revision history thinq! tm sic schottky diode revision history : 2012 - 0 3 - 2 3 , rev. 2 . 0 previous r evision: revision subjects (major changes since last version)
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